Dopant-defect interactions in Mg-doped GaN via atom probe tomography

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, ...

Dopant measurements in semiconductors with atom probe tomography

The capability of atom probe tomography to make useful measurements of dopant distribution single device geometry is explored by characterizing the compositional accuracy of reconstructed data sets. The objective of this analysis is to evaluate whether atom probe can provide measurements to guide a predictive model development for diffusion in device geometry and strain conditions. Simple measu...

Luminescence of Acceptors in Mg-Doped GaN

Zn-dopant dependent defect evolution in GaN nanowires.

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanow...

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...